Manufacturing method of a super-junction semiconductor device

Details Manufacturing method of a super-junction semiconductor device Manufacturing method of a super-junction semiconductor device

2007-09-13

2009-10-13

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S297000, C257SE21410, C257SE21417

Reexamination Certificate

active

07601597

ABSTRACT:
A manufacturing method for a super-junction semiconductor device is disclosed. The method includes a first step of depositing, on a low-resistivity semiconductor substrate of one conductivity type, at least an epitaxial layer of the one conductivity type which is to become a drift layer; a second step of forming a base region(s) of the other conductivity type and source regions of the one conductivity type to be used for formation of MOS gate structures; a third step of forming, by anisotropic vapor-phase etching using an insulating film mask, trenches that penetrate through the base region(s) and reach the low-resistivity semiconductor substrate or its vicinity; and a fourth step of burying epitaxial layers of the other conductivity type in the respective trenches, the first to fourth steps being executed in this order.

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