Manufacturing method for semiconductor device and...

Details Manufacturing method for semiconductor device and... Manufacturing method for semiconductor device and...

2011-04-12

2011-04-12

Huynh, Andy (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S478000, C438S479000, C438S758000, C257SE21010

Reexamination Certificate

active

07923355

ABSTRACT:
A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing H2or inert gas onto the wafer in a rectified state alternately in a predetermined cycle, rotating the wafer, and heating the wafer to form a film on the wafer.

REFERENCES:
patent: 2003/0129811 (2003-07-01), Raaijmakers et al.
patent: 2004/0224089 (2004-11-01), Singh et al.
patent: 2006/0286776 (2006-12-01), Ranish et al.
patent: 2007/0066082 (2007-03-01), Schauer et al.
patent: 2007/0232031 (2007-10-01), Singh et al.
patent: 11-67675 (1999-03-01), None

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