Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-27
2007-03-27
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S014000, C438S656000
Reexamination Certificate
active
10822960
ABSTRACT:
A method of manufacturing a microelectronic device, including performing a first inspection of a device feature during an intermediate stage of manufacture, cleaning the device feature after the first inspection, and performing a second inspection of the device feature after cleaning the device feature.
REFERENCES:
patent: 5520769 (1996-05-01), Barrett et al.
patent: 5926738 (1999-07-01), Cronin et al.
patent: 6038015 (2000-03-01), Kawata
patent: 6329826 (2001-12-01), Shinada et al.
patent: 6355516 (2002-03-01), Kim et al.
patent: 6403385 (2002-06-01), Venkatkrishnan et al.
patent: 6410927 (2002-06-01), Pike
patent: 6512227 (2003-01-01), Iwabuchi et al.
patent: 6525318 (2003-02-01), Kim et al.
patent: 6664196 (2003-12-01), Wada et al.
patent: 6841008 (2005-01-01), Branco et al.
patent: 6900135 (2005-05-01), Somekh et al.
patent: 6920241 (2005-07-01), Dutta-Choudhury et al.
patent: 6939726 (2005-09-01), Hsu et al.
patent: 63244748 (1988-10-01), None
Chu Cheng-Kuo
Lai Feng-Liang
Lee Pey-Yuan
Lo Chi-Shen
Haynes and Boone LLP
Huynh Andy
Taiwan Semiconductor Manufacturing Company , Ltd.
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