Manufacturing method for increasing product yield of memory...

Details Manufacturing method for increasing product yield of memory... Manufacturing method for increasing product yield of memory...

2006-11-14

2009-11-17

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S368000, C257SE21409, C257SE27060

Reexamination Certificate

active

07618869

ABSTRACT:
A DRAM device includes contact pads having a bottom in contact with a corresponding source/drain region21and a top in contact with a bottom of an overlying contact plug. The source/drain region has a recess caused by misalignment of the contact pad with respect to the source/drain region, the recess causing division of the original source/drain region. An additional diffused region is formed by ion-implantation to couple the divided source/drain region to reduce the junction leakage current flowing across the source/drain region.

REFERENCES:
patent: 2002/0079580 (2002-06-01), Matsumura
patent: 11-340436 (1999-12-01), None

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