Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-28
2000-09-05
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438 3, 438253, 438396, H01L 218242
Patent
active
061141992
ABSTRACT:
A ferroelectric thin film is subjected to heat treatment in an active oxygen atmosphere containing an oxidizing gas such as ozone, N.sub.2 O, or NO.sub.2, thereby preventing occurrence of oxygen defects (oxygen vacancies) in the thin film, and avoiding a deterioration in dielectric characteristics, ferroelectric characteristics, and electric characteristics required for the ferroelectric thin film, such as a reduction in permittivity, an increase in leakage current, a reduction in remanent polarization, and an increase in coercive electric field. Thus, the ferroelectric thin film having stable characteristics can be formed. Further, a nonvolatile memory cell using this ferroelectric thin film as a capacitor is formed.
REFERENCES:
patent: 5374578 (1994-12-01), Patel et al.
patent: 5423285 (1995-06-01), Paz De Araujo et al.
patent: 5426075 (1995-06-01), Perino et al.
patent: 5443030 (1995-08-01), Ishihara et al.
patent: 5468679 (1995-11-01), Paz De Araujo et al.
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5716875 (1998-02-01), Jones, Jr. et al.
patent: 5728603 (1998-03-01), Emesh et al.
Ravichandran, D et al., "The Effect of Annealing Temperature on the Formation of SrBi/sub 2/Ta/sub 2/O/sub 9/(SBT) Thin Films", Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on Applications of.; vol. 2, pp. 601-603, Aug. 1996.
Muller, R. et al., "Phase Compatibilities in the Bi-Poor region of the System Bi-Sr-Ca-O at 820 and 900.degree. C. in Air", Physica, C243, pp. 103-112, 1995.
Ami Takaaki
Gutleben Christian
Hironaka Katsuyuki
Isobe Chiharu
Sugiyama Masataka
Jr. Carl Whitehead
Kananen Ronald P.
Sony Corporation
Thomas Toniae M.
LandOfFree
Manufacturing method for ferroelectric film and nonvolatile memo does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method for ferroelectric film and nonvolatile memo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for ferroelectric film and nonvolatile memo will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2211479