Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-08-01
2006-08-01
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C117S094000, C117S099000, C117S102000, C117S105000
Reexamination Certificate
active
07084049
ABSTRACT:
A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate100, which has a surface silicon layer130of a predetermined thickness and a buried insulator120, in a heating furnace200and of increasing the temperature of the atmosphere within heating furnace200while supplying a mixed gas (G1+G2) of a hydrogen gas G1and of a hydrocarbon gas G2into heating furnace200, thereby, of metamorphosing surface silicon layer130of SOI substrate100into a single crystal silicon carbide thin film140.
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Hirai Seisaku
Izumi Katsutoshi
Jobe Fumihiko
Mine Keiji
Nakao Motoi
Armstrong Kratz Quintos Hanson & Brooks, LLP
Doty Heather
Hosiden Corporation
Osaka Prefecture
Schillinger Laura M.
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