Magnetron-enhanced plasma etching process

Details Magnetron-enhanced plasma etching process Magnetron-enhanced plasma etching process

1985-12-30

1987-05-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 156662, 156345, 204298, 20419232, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046683380

ABSTRACT:
A magnetically-enhanced, variable magnetic field, RIE mode plasma etch process for etching materials such as dielectrics and polycrystalline, is disclosed. The variable magnetic field permits optimization of selected characteristics such as etch rate, etch selectivity, ion bombardment and radiation damage, etch uniformity, and etch anisotropy.

REFERENCES:
patent: 3884793 (1975-05-01), Penfold et al.
patent: 4126530 (1978-11-01), Thornton
patent: 4422896 (1983-12-01), Class et al.
patent: 4434042 (1984-02-01), Keith
patent: 4492610 (1985-01-01), Okano et al.
Hinkel et al., Method of Increasing the Deposition and Etch Rates in Plasma Processes, IBM Technical Disclosure Bulletin, vol. 25, No. 7A, Dec. 1982, p. 3161.
Heiman, Method for Magnetically Assisted Sputter Etching and Deposition, IBM Tech. Discl. Bulletin, vol. 23, No. 9, Feb. 1981, p. 4295.
Horiike et al., High-Rate Reactive Ion Etching of SiO.sub.2 Using a Magnetron Discharge, Japanese Journal of Applied Physics, vol. 20, No. 11, Nov. 1981, pp. L817-L820.

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