Magnetic RAM cell device and array architecture

Details Magnetic RAM cell device and array architecture Magnetic RAM cell device and array architecture

2005-04-26

2005-04-26

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06885577

ABSTRACT:
A new magnetic RAM cell device is achieved. The device comprises a plurality MTJ cells each comprising a free layer and a pinned layer separated by a dielectric layer. A common conductive layer couples together all of the pinned layers of the MJT cell. A first end of the common conductive layer is switchably coupled to a programming line. A second end of the common conductive layer is switchably coupled to a ground. A pluraity of diodes is used. Each diode is coupled between one of the MJT cells and one of a plurality of bit lines.

REFERENCES:
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5838608 (1998-11-01), Zhu et al.
patent: 6242770 (2001-06-01), Bronner et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6418046 (2002-07-01), Naji
patent: 6456524 (2002-09-01), Perner et al.
patent: 6630703 (2003-10-01), Scheler et al.
patent: 6639830 (2003-10-01), Heide
U.S. patent application Publication US 2002/0001223 A1 to Saito et al., “Solid-State Magnetic Memory”.
S. Tehrani, “Recent Development in Magnetic Tunnel Junction MRAM”, IEEE Trans. On Magn. V36, No. 5, p. 2152, Sep. 2000.

Affiliated with

Also associated with

Rating

Magnetic RAM cell device and array architecture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic RAM cell device and array architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic RAM cell device and array architecture will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3378334