Lower electrode contact structure and method of forming the...

Details Lower electrode contact structure and method of forming the... Lower electrode contact structure and method of forming the...

2006-04-04

2006-04-04

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

07022569

ABSTRACT:
Lower electrode contact structures and methods of forming the same provide an interface having a large surface area between a lower electrode and the underlying layers. The lower electrode is in contact with a contact plug and an insulation layer in which the contact plug is buried. At least one supporting layer protrudes upright along the outer peripheral edge of the top surface of the contact plug. The interface between the lower electrode and the underlying layers is thus increased by the supporting layer(s) so that the lower electrode and the underlying layers will solidly adhere to each other.

REFERENCES:
patent: 6057190 (2000-05-01), Yoshida
patent: 6660580 (2003-12-01), Lee
patent: 2001-0061085 (2001-07-01), None

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