Low voltage coefficient polysilicon capacitor

Details Low voltage coefficient polysilicon capacitor Low voltage coefficient polysilicon capacitor

1995-12-27

1997-05-20

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438655, 438664, H01L 2170, H01L 2700

Patent

active

056311885

ABSTRACT:
A method for forming a low voltage coefficient capacitor within an integrated circuit. Formed upon a semiconductor substrate is a first polysilicon layer. Formed directly upon the first polysilicon layer is an Inter Polysilicon Dielectric (IPD) layer. Formed directly upon the Inter Polysilicon Dielectric (IPD) layer is a second polysilicon layer. The first polysilicon layer and the second polysilicon layer each have a resistivity no greater than about 40 ohms per square. Formed directly upon the second polysilicon layer is an amorphous silicon layer. Formed directly upon the amorphous silicon layer is a metal layer which is capable of forming a metal silicide with the amorphous silicon layer. The thickness of the metal layer and the thickness of the amorphous silicon layer are chosen to form a stoichiometric metal silicide with minimal consumption of the polysilicon layer. Finally, the semiconductor substrate is annealed to form a metal silicide layer from the amorphous silicon layer and the metal layer.

REFERENCES:
patent: 5081065 (1992-01-01), Jonkers et al.
patent: 5173437 (1992-12-01), Chi
patent: 5356826 (1994-10-01), Natsume
patent: 5397729 (1995-03-01), Kayanuma et al.
patent: 5543347 (1996-08-01), Kawano et al.

Affiliated with

Also associated with

Rating

Low voltage coefficient polysilicon capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low voltage coefficient polysilicon capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low voltage coefficient polysilicon capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1723592