Low-thermal-budget gapfill process

Details Low-thermal-budget gapfill process Low-thermal-budget gapfill process

2006-08-08

2006-08-08

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S294000

Reexamination Certificate

active

07087497

ABSTRACT:
A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An electrically insulating liner is deposited using atomic-layer deposition and polysilicon is deposited over the electrically insulating liner, with both stages being conducted at temperatures below 700° C.

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