Low temperature reflow dielectric-fluorinated BPSG

Details Low temperature reflow dielectric-fluorinated BPSG Low temperature reflow dielectric-fluorinated BPSG

1998-01-27

2000-05-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438790, 427 99, 4272551, 4272552, 4272553, H01L 2131, H01L 21469, H01L 21225

Patent

active

060572507

ABSTRACT:
An apparatus and method are provided for forming a fluorine doped borophosphosilicate (F-BPSG) glass on a semiconductor device using a low pressure chemical vapor deposition process. The F-BPSG glass exhibits a substantially void-free and particle-free layer on the substrate for structures having gaps as narrow as 0.10 microns and with aspect ratios of 6:1. The reactant gases include sources of boron and phosphorous dopants, oxygen and a mixture of TEOS and FTES. Using a mixture of TEOS and FTES in a low pressure CVD process provides a F-BPSG layer having the above enhanced characteristics. It is a preferred method of the invention to perform the deposition at a temperature of about 750-850.degree. C. and a pressure of 1 to 3 torr to provide for in situ reflow of the F-BPSG during the deposition process. An anneal is also preferred under similar conditions in the same chemical vapor deposition chamber to further planarize the F-BPSG surface. A F-BPSG glass and semiconductor wafers having a layer of fluorine doped BPSG thereon formed by the method and apparatus of the invention are also provided.

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