Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-07-24
2000-10-17
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438 3, 438239, 438386, 438399, 427 96, 427100, 4273762, H01L 218242, H01L 2120
Patent
active
061330922
ABSTRACT:
A liquid precursor containing thallium is applied to a first electrode, RTP baked at a temperature lower than 725.degree. C., and annealed at the same temperature for a time period from one to five hours to yield a ferroelectric layered superlattice material. A second electrode is formed to form a capacitor, and a second anneal is performed at a temperature lower than 725.degree. C. If the material is strontium bismuth thallium tantalate, the precursor contains (m-1) mole-equivalents of strontium for each of (2.2-x) mole-equivalents of bismuth, x mole-equivalents of thallium, and m mole-equivalents of tantalum, where m=2 and 0.0<x.ltoreq.2.2.
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Hayashi Shinichiro
Paz De Araujo Carlos A.
Ghyka Alexander G.
Matsushita Electronics Corporation
Symetrix Corporation
Tsai Jey
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