Low temperature method for metal deposition

Details Low temperature method for metal deposition Low temperature method for metal deposition

2007-02-13

2007-02-13

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S393000, C438S396000, C438S687000, C438S688000, C257SE27048, C257SE27071, C257SE21351

Reexamination Certificate

active

10851044

ABSTRACT:
A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. The resulting metal film is characterized by enhanced thickness uniformity and reduced grain agglomeration which otherwise tends to reduce the operational integrity of a capacitor or other device of which the metal film is a part. Furthermore, the metal film is characterized by intrinsic breakdown voltage (Vbd) improvement.

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patent: 2004/0195653 (2004-10-01), Morozumi et al.
patent: 2005/0205906 (2005-09-01), Udayakumar et al.

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