Low resistivity W using B.sub.2 H.sub.6 nucleation step

Details Low resistivity W using B.sub.2 H.sub.6 nucleation step Low resistivity W using B.sub.2 H.sub.6 nucleation step

1997-12-02

2000-08-08

Meeks, Timothy

Coating processes

Coating by vapor, gas, or smoke

Metal coating

42725523, 4272557, 438656, 438680, 438685, C23C 1608

Patent

active

060999047

ABSTRACT:
A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate. In a preferred embodiment, the flow of the tungsten-containing source is stopped along with the flow of the group III or V hydride and after a period of between 5 and 30 seconds, the flow of the tungsten-containing source is restarted when the pressure is in the deposition zone is increased to the second pressure level.

REFERENCES:
patent: 4699805 (1987-10-01), Seelbach et al.
patent: 4957666 (1990-09-01), Black et al.
patent: 5028565 (1991-07-01), Chang et al.
patent: 5043299 (1991-08-01), Chang et al.
patent: 5250467 (1993-10-01), Somekh et al.
patent: 5272112 (1993-12-01), Schmitz et al.
patent: 5306666 (1994-04-01), Izumi
patent: 5328722 (1994-07-01), Ghanayem et al.
patent: 5407698 (1995-04-01), Emesh
patent: 5433975 (1995-07-01), Roberts et al.
patent: 5769951 (1998-06-01), Van De Ven et al.
Takayuki Ohba, "Advanced Multilevel Metallization Technology", Applied Surface Science, pp. 1-11 (no month), 1995.
Takayuki Ohba et al., "Selective CVD Tungsten Silicide for VLSI Applications," International Electron Devices Meeting, Washington, DC, Dec. 6-9, 1987, pp. 213-216, Dec. 1987.
Takayuki Ohba, "Advanced Multilevel Metallization Technology," Applied Surface Science, pp. 1-11, (1995) (No Month).
T. Hara et al., "Low Resistivity Tungsten Film Using Diborane Reduction," Conference Proceedings ULSI-1X-1994 Materials Research Society--San Diego, CA Oct. 5-7, 1993, pp. 353-358, Oct. 1993.
Takayuki Ohba et al., "Chemical Vapour Deposition of Tungsten by the Reduction of WF.sub.6 Using Si, SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8, B.sub.2 H.sub.6, PH.sub.3, and H.sub.2," J. Instn. Electronics and Telecom. Engrs., vol. 37, No. 2, pp. 212-219, (1991) (No Month).

Affiliated with

Also associated with

Rating

Low resistivity W using B.sub.2 H.sub.6 nucleation step does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low resistivity W using B.sub.2 H.sub.6 nucleation step, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low resistivity W using B.sub.2 H.sub.6 nucleation step will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1147981