Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Semiconductive

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365185, 365 63, G11C 506

Patent

active

052608948

ABSTRACT:
According to this invention, a semiconductor non-volatile memory is formed as follows. In an EPROM memory array consisting of MIS transistors arranged in a matrix form, a first bit line consisting of polysilicon is connected to a drain region through a first contact formed in the drain region, a second bit line formed on the first bit line through an interlayer insulator by a metal film is connected to the first bit line by a second contact, and the second contact is formed on each source line of the memory array.

REFERENCES:
patent: 4500975 (1985-02-01), Shirato
patent: 4760554 (1988-07-01), Schreck et al.
patent: 4780846 (1988-10-01), Tanabe et al.

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