Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Patent
1995-09-20
1998-06-02
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
257643, 257642, 257759, 257753, B29B 1300, H01L 21283, B05D 302
Patent
active
057604800
ABSTRACT:
A low RC delay interconnection pattern is formed with a low resistivity metal, such as copper, and a low dielectric constant material, such as organic polymers. An intermediate bonding layer is formed between the low resistivity metal and low dielectric constant material employing an adhesion promoter, such as a silane-based adhesion promoter. The adhesion promoter can be applied between the metal and dielectric layers or incorporated in the dielectric layer.
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Adema et al., "Passivation Schemes for Copper/Polymer Thin-Film Interconnections Used in Multichip Modules," IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 16, No. 1, Feb. 1993, pp. 53-58.
Chan Simon S.
Cheung Robin W.
Huang Richard J.
You Lu
Advanced Micro Devics, Inc.
Fahmy Wael
Williams Alexander Oscar
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