Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1998-07-13
2000-06-06
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257635, 257636, 257640, H01L 2358
Patent
active
060722274
ABSTRACT:
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and nitrous oxide, N.sub.2 O, at a pulsed RF power level from 50-200 W during 10-30% of the duty cycle.
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PCT International Search Report for PCT/US99/02903.
Cheung David
Jeng Shin-Puu
Liu Kuowei
Yau Wai-Fan
Yu Yung-Cheng
Applied Materials Inc.
Saadat Mahshid
Wilson Allan R.
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