Low dielectric (low k) barrier films with oxygen doping by...

Details Low dielectric (low k) barrier films with oxygen doping by... Low dielectric (low k) barrier films with oxygen doping by...

2007-01-02

2007-01-02

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S786000, C438S788000, C438S789000

Reexamination Certificate

active

11021319

ABSTRACT:
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

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