Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-09-13
2005-09-13
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S483000
Reexamination Certificate
active
06943095
ABSTRACT:
A low defect density (Ga,Al,In)N material. The (Ga, Al, In)N material may be of large area, crack-free character, having a defect density as low as 3×106defects/cm2or lower. Such (Ga,Al,In)N material is useful as a substrate for epitaxial growth of Group III-V nitride device structures thereon.
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Phanse Vivek M.
Tischler Michael A.
Vaudo Robert P.
Cree Inc.
Fuierer Marianne
Hultquist Steven
Mulpuri Savitri
Yang Yongzhi
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