4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Specified wide band gap semiconductor material other than...
  6. Diamond or silicon carbide

Michael A. Tischler

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Bulk single crystal gallium nitride and method of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Reexamination Certificate

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Bulk single crystal gallium nitride and method of making same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Fluid storage and dispensing system

Gas separation: processes – Solid sorption – And regeneration
Reexamination Certificate

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Free-standing (Al, Ga, In)N and parting method for forming same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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GaN-based devices using (Ga, AL, In)N base layers

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Patent

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Profile ID: LFUS-PAI-P-516364

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