Logic and single level polysilicon DRAM devices fabricated on th

Details Logic and single level polysilicon DRAM devices fabricated on th Logic and single level polysilicon DRAM devices fabricated on th

1997-10-14

1999-05-04

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 701

Patent

active

059006587

ABSTRACT:
A semiconductor fabrication process has been developed in which both DRAM and logic device structures are integrated on a single silicon chip. The process features combining process steps for both device types, while using only a single level of polysilicon for both a high capacity DRAM cell, as well as for a CMOS logic cell. The high capacity DRAM cell is composed of an overlying polysilicon storage gate structure, a thin dielectric layer, and an underlying doped semiconductor regions.

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