Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-01
2007-05-01
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S310000
Reexamination Certificate
active
10934378
ABSTRACT:
The present invention enables the production of improved high-reliability, high-density semiconductor devices. The present invention provides the high-density semiconductor devices by decreasing the size of semiconductor device structures, such as gate channel lengths. Short-channel effects are prevented by the use of highly localized halo implant regions formed in the device channel. Highly localized halo implant regions are formed by a tilt pre-amorphization implant and a laser thermal anneal of the halo implant region.
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Ogle Robert B.
Paton Eric N.
Tabery Cyrus E.
Xiang Qi
Yu Bin
Advanced Micro Devices , Inc.
Lebentritt Michael
Stevenson Andre′
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