Local SONOS-type nonvolatile memory device and method of...

Details Local SONOS-type nonvolatile memory device and method of... Local SONOS-type nonvolatile memory device and method of...

2006-05-02

2006-05-02

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000

Reexamination Certificate

active

07037781

ABSTRACT:
Provided are a local SONOS-type memory device and a method of manufacturing the same. The device includes a gate oxide layer formed on a silicon substrate; a conductive spacer and a dummy spacer, which are formed on the gate oxide layer and separated apart from each other, the conductive spacer and the dummy spacer having round surfaces that face outward; a pair of insulating spacers formed on a sidewall of the conductive spacer and a sidewall of the dummy spacer which face each other; an ONO layer formed in a self-aligned manner between the pair of insulating spacers; a conductive layer formed on the ONO layer in a self-aligned manner between the pair of insulating spacers; and source and drain regions formed in the silicon substrate outside the conductive spacer and the dummy spacer.

REFERENCES:
patent: 6384450 (2002-05-01), Hidaka et al.
patent: 6518110 (2003-02-01), Wen
patent: 6583009 (2003-06-01), Hui et al.
patent: 6955963 (2005-10-01), Deleonibus et al.

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