Local-length nitride SONOS device having self-aligned ONO...

Details Local-length nitride SONOS device having self-aligned ONO... Local-length nitride SONOS device having self-aligned ONO...

2006-12-12

2006-12-12

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C257SE21680

Reexamination Certificate

active

07148110

ABSTRACT:
In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.

REFERENCES:
patent: 5459091 (1995-10-01), Hwang
patent: 2002/0100926 (2002-08-01), Kim et al.
patent: 2003/0160280 (2003-08-01), Yoshino
patent: 2004/0145009 (2004-07-01), Min et al.
patent: 2004/0183106 (2004-09-01), Kim et al.
patent: 2005/0054167 (2005-03-01), Choi et al.

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