Coating apparatus – Gas or vapor deposition
Patent
1996-11-13
2000-02-01
Breneman, Bruce
Coating apparatus
Gas or vapor deposition
156345, C23C 1600
Patent
active
060198486
ABSTRACT:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
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Frankel Jonathan
Fukshansky Eugene
Shmurun Inna
Sivaramakrishnan Visweswaren
Applied Materials Inc.
Breneman Bruce
Fieler Erin
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