Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With gas inlet structure
Reexamination Certificate
2001-03-02
2003-12-09
Hassanzadel, Parviz (Department: 1763)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With gas inlet structure
C156S345330, C118S715000
Reexamination Certificate
active
06660126
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to semiconductor processing. More particularly, this invention relates to a processing system and method of distributing fluid therein to facilitate sequential deposition of films on a substrate.
2. Description of the Related Art
The semiconductor processing industry continues to strive for larger production yields while increasing the uniformity of layers deposited on substrates having increasingly larger surface areas. These same factors in combination with new materials also provide higher integration of circuits per unit area of the substrate. As circuit integration increases, the need for greater uniformity and process control regarding layer thickness rises. As a result, various technologies have been developed to deposit layers on substrates in a cost-effective manner, while maintaining control over the characteristics of the layer. Chemical Vapor Deposition (CVD) is a common deposition processes employed for depositing layers on a substrate. CVD is a flux-dependent deposition technique that requires precise control of the substrate temperature and precursors introduced into the processing chamber in order to produce a desired layer of uniform thickness. These requirements become more critical as substrate size increases, creating a need for more complexity in chamber design and fluid flow technique to maintain adequate uniformity.
A variant of CVD that demonstrates superior step coverage is a sequential deposition technique known as Atomic Layer Deposition (ALD). ALD has steps of chemisorption that deposit monolayers of reactive precursor molecules on a substrate surface. To that end, a pulse of a first reactive precursor is introduced into a processing chamber to deposit a first monolayer of molecules on a substrate disposed in the processing chamber. A pulse of a second reactive precursor is introduced into the processing chamber to form an additional monolayer of molecules adjacent to the first monolayer of molecules. In this manner, a layer is formed on a substrate by alternatingly pulsing an appropriate reactive precursor into a deposition chamber. Each injection of a reactive precursor is separated by an inert fluid purge to provide a new atomic layer additive to previous deposited layers to form a uniform layer on the substrate. The cycle is repeated to form the layer to a desired thickness. A drawback with ALD techniques is that the deposition rate is much lower than typical CVD techniques.
A need exists, therefore, to reduce the time required to deposit films employing sequential deposition techniques.
SUMMARY OF THE INVENTION
Provided is a lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces, with valve coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in an original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction.
REFERENCES:
patent: 3603284 (1971-09-01), Garnache
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4486487 (1984-12-01), Skarp
patent: 4718976 (1988-01-01), Fujimura
patent: 4767494 (1988-08-01), Kobayashi et al.
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4813846 (1989-03-01), Helms
patent: 4829022 (1989-05-01), Kobayashi et al.
patent: 4834831 (1989-05-01), Nishizawa et al.
patent: 4838983 (1989-06-01), Schumaker et al.
patent: 4838993 (1989-06-01), Aoki et al.
patent: 4840921 (1989-06-01), Matsumoto
patent: 4845049 (1989-07-01), Sunakawa
patent: 4859625 (1989-08-01), Matsumoto
patent: 4859627 (1989-08-01), Sunakawa
patent: 4861417 (1989-08-01), Mochizuki et al.
patent: 4876218 (1989-10-01), Pessa et al.
patent: 4917556 (1990-04-01), Stark et al.
patent: 4927670 (1990-05-01), Erbil
patent: 4931132 (1990-06-01), Aspnes et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4960720 (1990-10-01), Shimbo
patent: 4975252 (1990-12-01), Nishizawa et al.
patent: 4977855 (1990-12-01), Ohmi et al.
patent: 4993357 (1991-02-01), Scholz
patent: 5000113 (1991-03-01), Wang et al.
patent: 5013683 (1991-05-01), Petroff et al.
patent: 5028565 (1991-07-01), Chang et al.
patent: 5082798 (1992-01-01), Arimoto
patent: 5085885 (1992-02-01), Foley et al.
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5130269 (1992-07-01), Kitahara et al.
patent: 5166092 (1992-11-01), Mochizuki et al.
patent: 5173474 (1992-12-01), Connell et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5205077 (1993-04-01), Wittstock
patent: 5225366 (1993-07-01), Yoder
patent: 5234561 (1993-08-01), Randhawa et al.
patent: 5246536 (1993-09-01), Nishizawa et al.
patent: 5250148 (1993-10-01), Nishizawa et al.
patent: 5254207 (1993-10-01), Nishizawa et al.
patent: 5256244 (1993-10-01), Ackerman
patent: 5259881 (1993-11-01), Edwards et al.
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5281274 (1994-01-01), Yoder
patent: 5286296 (1994-02-01), Sato et al.
patent: 5290748 (1994-03-01), Knuuttila et al.
patent: 5294286 (1994-03-01), Nishizawa et al.
patent: 5296403 (1994-03-01), Nishizawa et al.
patent: 5300186 (1994-04-01), Kitahara et al.
patent: 5311055 (1994-05-01), Goodman et al.
patent: 5316615 (1994-05-01), Copel et al.
patent: 5316793 (1994-05-01), Wallace et al.
patent: 5330610 (1994-07-01), Eres et al.
patent: 5336324 (1994-08-01), Stall et al.
patent: 5338389 (1994-08-01), Nishizawa et al.
patent: 5348911 (1994-09-01), Jurgensen et al.
patent: 5374570 (1994-12-01), Nasu et al.
patent: 5395791 (1995-03-01), Cheng et al.
patent: 5438952 (1995-08-01), Otsuka
patent: 5439876 (1995-08-01), Graf et al.
patent: 5441568 (1995-08-01), Cho et al.
patent: 5441703 (1995-08-01), Jurgensen
patent: 5443033 (1995-08-01), Nishizawa et al.
patent: 5443647 (1995-08-01), Aucoin et al.
patent: 5455072 (1995-10-01), Bension et al.
patent: 5458084 (1995-10-01), Thorne et al.
patent: 5469806 (1995-11-01), Mochizuki et al.
patent: 5480818 (1996-01-01), Matsumoto et al.
patent: 5483919 (1996-01-01), Yokoyama et al.
patent: 5484664 (1996-01-01), Kitahara et al.
patent: 5494522 (1996-02-01), Moriya et al.
patent: 5503875 (1996-04-01), Imai et al.
patent: 5521126 (1996-05-01), Okamura et al.
patent: 5527733 (1996-06-01), Nishizawa et al.
patent: 5532511 (1996-07-01), Nishizawa et al.
patent: 5540783 (1996-07-01), Eres et al.
patent: 5580380 (1996-12-01), Liu et al.
patent: 5601651 (1997-02-01), Watabe
patent: 5609689 (1997-03-01), Kato et al.
patent: 5616181 (1997-04-01), Yamamoto et al.
patent: 5637530 (1997-06-01), Gaines et al.
patent: 5641984 (1997-06-01), Aftergut et al.
patent: 5644128 (1997-07-01), Wollnik et al.
patent: 5667592 (1997-09-01), Boitnott et al.
patent: 5674786 (1997-10-01), Turner et al.
patent: 5693139 (1997-12-01), Nishizawa et al.
patent: 5695564 (1997-12-01), Imahashi
patent: 5705224 (1998-01-01), Murota et al.
patent: 5707880 (1998-01-01), Aftergut et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5730801 (1998-03-01), Tepman et al.
patent: 5730802 (1998-03-01), Ishizumi et al.
patent: 5747113 (1998-05-01), Tsai
patent: 5749974 (1998-05-01), Habuka et al.
patent: 5788447 (1998-08-01), Yonemitsu et al.
patent: 5788799 (1998-08-01), Steger et al.
patent: 5796116 (1998-08-01), Nakata et al.
patent: 5801634 (1998-09-01), Young et al.
patent: 5807792 (1998-09-01), Ilg et al.
patent: 5830270 (1998-11-01), McKee et al.
patent: 5835677 (1998-11-01), Li et al.
patent: 5851849 (1998-12-01), Comizzoli et al.
patent: 5855675 (1999-01-01), Doering et al.
patent: 5855680 (1999-01-01), Soininen et al.
patent: 5856219 (1999-01-01), Naito et al.
patent: 5858102 (1999-01-01), Tsai
patent: 5866213 (1999-02-01), Foster et al.
patent: 5866795 (1999-02-01), Wang et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5882165 (1999-03-01), Maydan et al.
patent:
Chang Anzhong
Chung Hua
Lu Siqing
Nguyen Anh N.
Xi Ming
Applied Materials Inc.
Hassanzadel Parviz
Moore Karla
Moser Patterson & Sheridan
LandOfFree
Lid assembly for a processing system to facilitate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lid assembly for a processing system to facilitate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lid assembly for a processing system to facilitate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3156096