Stock material or miscellaneous articles – Circular sheet or circular blank
Patent
1997-10-17
2000-08-29
Kiliman, Leszek
Stock material or miscellaneous articles
Circular sheet or circular blank
428 666, 118715, 118719, 118723I, 118723IR, 118723E, 118723R, 118723ER, 118724, 118725, 118728, 118729, 156345, B32B 302, C23C 1600
Patent
active
061105562
ABSTRACT:
A chemical vapor deposition (CVD) system of the type having an enclosure housing a process chamber and a supply of cleaning gas, features a lid having a base plate with opposed first and second major surfaces and a plurality of throughways extending therebetween to provide an asymmetric flow of cleaning gas into the chamber. Specifically, a subportion of the second major surface lies in a plane of truncation and faces the process chamber when the lid is in a closed position. The remaining portions of the second major surface are recessed, defining central and annular recesses. The annular recess has a base surface and two spaced-apart side surfaces extending from the base surface and terminating proximate to the plane of truncation. The plurality of throughways consists of primary and secondary throughways, each of which extends from an opening in the first major surface and terminates in an orifice. The orifices associated with the secondary throughways are positioned in one of the side surfaces of the annular recess. The orifices associated with the primary throughways lie in the plane that extends orthogonally to the spaced-apart side surfaces.
REFERENCES:
patent: 3934060 (1976-01-01), Burt et al.
patent: 4002512 (1977-01-01), Lim
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4567938 (1986-02-01), Turner
patent: 4695700 (1987-09-01), Provence et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5356476 (1994-10-01), Foster et al.
patent: 5510297 (1996-04-01), Telford et al.
patent: 5516367 (1996-05-01), Lei et al.
patent: 5545289 (1996-08-01), Chen et al.
patent: 5549802 (1996-08-01), Guo
patent: 5551982 (1996-09-01), Anderson et al.
patent: 5558717 (1996-09-01), Zhao
patent: 6019848 (2000-02-01), Foukel
A.C. Adams et al., "The Deposition of Silicon Dioxide Films at Reduced Pressure," J. Electrochem. Soc.: Solid State Science and Technology, vol. 126, No. 6, pp. 1042-1046, (Jun. 1979).
D.B. Lee, "Diffusion Into Silicon From an Arsenic-Doped Oxide," Solid State Electronics, Pergamon Press, Printed in Great Britain, vol. 10, pp. 623-624, (1967).
S.M. Sze, "Dielectric and Polysilicon Film Deposition", VLSI Technology (McGraw-Hill Book Company), pp. 94-108 and 116, (1983).
E. Tanikawa et al., "Doped Oxide Films by Chemical Vapor Deposition in an Evacuated System," Denki Kagaku, vol. 41, No. 7, pp. 491-497, (1971).
R.H. Vogel et al., "Electrical Properties of 10-50 nm TEOS LPCVD Films," Technical Report U.S. Army Research Office Contract DAAG29-14 81-K-0007, pp. 1-29, (1984).
Bang Won
Pham Thanh
Yieh Ellie
Applied Materials Inc.
Kiliman Leszek
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