Leakage current reduction of a tantalum oxide layer via a nitrou

Details Leakage current reduction of a tantalum oxide layer via a nitrou Leakage current reduction of a tantalum oxide layer via a nitrou

1999-04-23

2000-11-21

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, H01L 218242

Patent

active

06150209&

ABSTRACT:
A process of fabricating a capacitor structure, using a tantalum oxide capacitor dielectric layer, has been developed. The process features deposition of a thin, high dielectric constant tantalum oxide layer, followed by a high density plasma anneal procedure, used to reduce the leakage current in the as-deposited tantalum oxide layer, that can evolve during normal operating conditions of the capacitor structure. The high density plasma anneal procedure is performed in a nitrous oxide ambient, at a temperature of about 400.degree. C.

REFERENCES:
patent: 5352623 (1994-10-01), Kamiyama
patent: 5468687 (1995-11-01), Carl et al.
patent: 5622888 (1997-04-01), Sekine et al.
patent: 5641702 (1997-06-01), Imai et al.
patent: 5786248 (1998-07-01), Schuegraf
patent: 5804852 (1998-09-01), Yang et al.

Affiliated with

Also associated with

Rating

Leakage current reduction of a tantalum oxide layer via a nitrou does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Leakage current reduction of a tantalum oxide layer via a nitrou, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Leakage current reduction of a tantalum oxide layer via a nitrou will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1256004