LDD-type miniaturized MOS transistors

Details LDD-type miniaturized MOS transistors LDD-type miniaturized MOS transistors

2005-05-03

2005-05-03

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C438S664000

Reexamination Certificate

active

06887759

ABSTRACT:
The invention concerns a method for forming, in a substrate (1) having a first type of conductivity, a MOS transistor, comprising the following steps: a) forming on the substrate an insulated gate (3); b) implanting a doping agent having a second type of conductivity; c) forming on the edges of the gate silicon nitride spacers; d) simultaneously oxidising the apparent surfaces of the substrate, the gate and the spacers; and e) drain and source implantation.

REFERENCES:
patent: 5397909 (1995-03-01), Moslehi
patent: 5952246 (1999-09-01), Wang et al.
patent: 6521529 (2003-02-01), Ngo et al.
patent: 6740574 (2004-05-01), Gonzalez et al.

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