Lateral doped channel

Details Lateral doped channel Lateral doped channel

2006-05-23

2006-05-23

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S217000

Reexamination Certificate

active

07049188

ABSTRACT:
A lateral doped channel. A first doping material is implanted substantially vertically into a region adjacent to a gate structure. A diffusion process diffuses the first doping material into a channel region beneath the gate structure. A second doping material is implanted substantially vertically into the region adjacent to a gate structure. The second implantation forms source/drain regions and may terminate the channel region. The channel region thus comprises a laterally non-uniform doping profile which beneficially mitigates the short channel effect and is highly advantageous as compensation for manufacturing process variations in channel length.

REFERENCES:
patent: 4968639 (1990-11-01), Bergonzoni
patent: 5337274 (1994-08-01), Ohji
patent: 5841170 (1998-11-01), Adan et al.
patent: 6238982 (2001-05-01), Krivokapic et al.
patent: 6287917 (2001-09-01), Park et al.
patent: 6479346 (2002-11-01), Yi et al.
patent: 6486029 (2002-11-01), Foote et al.
patent: 6580103 (2003-06-01), Yi et al.
patent: 2002/0127802 (2002-09-01), Goda et al.

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