Laser annealing method and laser annealing device

Details Laser annealing method and laser annealing device Laser annealing method and laser annealing device

1996-10-23

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438662, 438795, H01L 2184

Patent

active

060279605

ABSTRACT:
A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the air. Also, a laser-annealing device includes a cleaning chamber, and a laser irradiation chamber, wherein a substrate to be processed is transported between the cleaning chamber and the laser irradiation chamber without being exposed to the air.

REFERENCES:
patent: 4292093 (1981-09-01), Ownby
patent: 5024968 (1991-06-01), Engelsberg
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5529630 (1996-06-01), Imahashi
patent: 5593497 (1997-01-01), Matsuyama
patent: 5843225 (1995-06-01), Takayama et al.
patent: 5843833 (1995-06-01), Ohtani et al.

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