Lanthanum aluminum oxynitride dielectric films

Details Lanthanum aluminum oxynitride dielectric films Lanthanum aluminum oxynitride dielectric films

2005-08-31

2008-08-12

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S770000, C257SE21191

Reexamination Certificate

active

07410910

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a lanthanum aluminum oxynitride film on a substrate for use in a variety of electronic systems. The lanthanum aluminum oxynitride film may be structured as one or more monolayers. The lanthanum aluminum oxynitride film may be formed by atomic layer deposition.

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