Lanthanide yttrium aluminum oxide dielectric films

Details Lanthanide yttrium aluminum oxide dielectric films Lanthanide yttrium aluminum oxide dielectric films

2005-12-08

2009-11-10

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S261000, C257S310000, C257S324000, C257SE21002

Reexamination Certificate

active

07615438

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium aluminum oxide film may be structured as one or more monolayers. The lanthanide yttrium aluminum oxide film may be formed by atomic layer deposition.

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