Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2007-01-31
2010-10-05
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S659000, C257SE21637
Reexamination Certificate
active
07807522
ABSTRACT:
Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal nitride is formed above a gate dielectric. A lanthaide series metal is implanted into the metal screen layer above the gate dielectric. The lanthaide metal is contained in the screen layer or at the interface between the screen metal layer and the gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting PMOS or NMOS transistors.
REFERENCES:
patent: 4494996 (1985-01-01), Ohno et al.
patent: 2006/0134870 (2006-06-01), Luan et al.
patent: 2006/0183277 (2006-08-01), Brask et al.
patent: 2006/0286802 (2006-12-01), Yu et al.
Alshareef Husam
Pas Michael F.
Ramin Manfred
Brady III Wade J.
Franz Warren L.
Sarkar Asok K
Slutsker Julia
Telecky , Jr. Frederick J.
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