Lanthanide oxide / hafnium oxide dielectric layers

Details Lanthanide oxide / hafnium oxide dielectric layers Lanthanide oxide / hafnium oxide dielectric layers

2007-03-20

2007-03-20

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S761000, C438S778000, C438S785000

Reexamination Certificate

active

10602323

ABSTRACT:
Dielectric layers containing an atomic layer deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Forming a layer of hafnium oxide by atomic layer deposition and forming a layer of a lanthanide oxide by electron beam evaporation, where the layer of hafnium oxide is adjacent and in contact with the layer of lanthanide, provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.

REFERENCES:
patent: 3357961 (1967-12-01), Makowski et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4993358 (1991-02-01), Mahawili
patent: 5055319 (1991-10-01), Bunshah et al.
patent: 5302461 (1994-04-01), Anthony
patent: 5625233 (1997-04-01), Cabral, Jr. et al.
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5912797 (1999-06-01), Schneemeyer et al.
patent: 5916365 (1999-06-01), Sherman
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6120531 (2000-09-01), Zhou et al.
patent: 6187484 (2001-02-01), Glass et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207589 (2001-03-01), Ma et al.
patent: 6273951 (2001-08-01), Vaartstra
patent: 6291866 (2001-09-01), Wallace et al.
patent: 6294813 (2001-09-01), Forbes et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6331465 (2001-12-01), Forbes et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 6387712 (2002-05-01), Yano et al.
patent: 6420230 (2002-07-01), Derderian et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6448192 (2002-09-01), Kaushik
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6458701 (2002-10-01), Chae et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6509280 (2003-01-01), Choi
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6518610 (2003-02-01), Yang et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6524867 (2003-02-01), Yang et al.
patent: 6527866 (2003-03-01), Matijasevic et al.
patent: 6531354 (2003-03-01), Maria et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6537613 (2003-03-01), Senzaki et al.
patent: 6541079 (2003-04-01), Bojarczuk, Jr. et al.
patent: 6541353 (2003-04-01), Sandhu et al.
patent: 6551893 (2003-04-01), Zheng et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6559472 (2003-05-01), Sandhu et al.
patent: 6573199 (2003-06-01), Sandhu et al.
patent: 6586349 (2003-07-01), Jeon et al.
patent: 6592942 (2003-07-01), Van Wijck
patent: 6593610 (2003-07-01), Gonzalez
patent: 6596636 (2003-07-01), Sandhu et al.
patent: 6608378 (2003-08-01), Ahn et al.
patent: 6613656 (2003-09-01), Li
patent: 6613702 (2003-09-01), Sandhu et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 6627260 (2003-09-01), Derderian et al.
patent: 6627503 (2003-09-01), Ma et al.
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6638859 (2003-10-01), Sneh et al.
patent: 6639267 (2003-10-01), Eldridge
patent: 6645882 (2003-11-01), Halliyal et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6661058 (2003-12-01), Ahn et al.
patent: 6673701 (2004-01-01), Marsh et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6683005 (2004-01-01), Sandhu et al.
patent: 6683011 (2004-01-01), Smith et al.
patent: 6686212 (2004-02-01), Conley, Jr. et al.
patent: 6696332 (2004-02-01), Visokay et al.
patent: 6699747 (2004-03-01), Ruff et al.
patent: 6709989 (2004-03-01), Ramdani et al.
patent: 6713846 (2004-03-01), Senzaki
patent: 6730575 (2004-05-01), Eldridge
patent: 6750066 (2004-06-01), Cheung et al.
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6770536 (2004-08-01), Wilk et al.
patent: 6777353 (2004-08-01), Putkonen
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6787370 (2004-09-01), Forbes
patent: 6787413 (2004-09-01), Ahn
patent: 6790791 (2004-09-01), Ahn et al.
patent: 6800567 (2004-10-01), Cho
patent: 6803311 (2004-10-01), Choi
patent: 6812100 (2004-11-01), Ahn et al.
patent: 6821862 (2004-11-01), Cho
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 6844203 (2005-01-01), Ahn et al.
patent: 6844260 (2005-01-01), Sarigiannis et al.
patent: 6852167 (2005-02-01), Ahn
patent: 6858444 (2005-02-01), Ahn et al.
patent: 6884739 (2005-04-01), Ahn et al.
patent: 6893984 (2005-05-01), Ahn et al.
patent: 6900122 (2005-05-01), Ahn et al.
patent: 6914800 (2005-07-01), Ahn et al.
patent: 6921702 (2005-07-01), Ahn et al.
patent: 6930346 (2005-08-01), Ahn et al.
patent: 2001/0002280 (2001-05-01), Sneh
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0030352 (2001-10-01), Ruff et al.
patent: 2001/0042505 (2001-11-01), Vaartstra
patent: 2002/0001971 (2002-01-01), Cho
patent: 2002/0024080 (2002-02-01), Derderian et al.
patent: 2002/0025628 (2002-02-01), Derderian et al.
patent: 2002/0046705 (2002-04-01), Sandhu et al.
patent: 2002/0086555 (2002-07-01), Ahn et al.
patent: 2002/0089023 (2002-07-01), Yu et al.
patent: 2002/0094632 (2002-07-01), Agarwal et al.
patent: 2002/0100418 (2002-08-01), Sandhu et al.
patent: 2002/0102818 (2002-08-01), Sandhu et al.
patent: 2002/0110991 (2002-08-01), Li
patent: 2002/0111001 (2002-08-01), Ahn et al.
patent: 2002/0122885 (2002-09-01), Ahn
patent: 2002/0130338 (2002-09-01), Ahn et al.
patent: 2002/0146916 (2002-10-01), Irino et al.
patent: 2002/0155688 (2002-10-01), Ahn et al.
patent: 2002/0155689 (2002-10-01), Ahn et al.
patent: 2002/0164420 (2002-11-01), Derderian et al.
patent: 2002/0177282 (2002-11-01), Song
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2002/0192975 (2002-12-01), Ahn
patent: 2002/0195056 (2002-12-01), Sandhu et al.
patent: 2003/0003702 (2003-01-01), Ahn et al.
patent: 2003/0003722 (2003-01-01), Vaartstra
patent: 2003/0003730 (2003-01-01), Li
patent: 2003/0017717 (2003-01-01), Ahn et al.
patent: 2003/0042526 (2003-03-01), Weimer
patent: 2003/0045060 (2003-03-01), Ahn
patent: 2003/0045078 (2003-03-01), Ahn et al.
patent: 2003/0045082 (2003-03-01), Eldridge et al.
patent: 2003/0048666 (2003-03-01), Eldridge et al.
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2003/0052356 (2003-03-01), Yang et al.
patent: 2003/0052358 (2003-03-01), Weimer
patent: 2003/0059535 (2003-03-01), Luo et al.
patent: 2003/0102501 (2003-06-01), Yang et al.
patent: 2003/0104666 (2003-06-01), Bojarczuk, Jr. et al.
patent: 2003/0119246 (2003-06-01), Ahn
patent: 2003/0119291 (2003-06-01), Ahn et al.
patent: 2003/0119313 (2003-06-01), Yang et al.
patent: 2003/0124794 (2003-07-01), Girardie
patent: 2003/0132491 (2003-07-01), Ahn
patent: 2003/0157764 (2003-08-01), Ahn et al.
patent: 2003/0170389 (2003-09-01), Sandhu
patent: 2003/0170403 (2003-09-01), Doan et al.
patent: 2003/0175411 (2003-09-01), Kodas et al.
patent: 2003/0181039 (2003-09-01), Sandhu et al.
patent: 2003/0183156 (2003-10-01), Dando et al.
patent: 2003/0185980 (2003-10-01), Endo
patent: 2003/0193061 (2003-10-01), Osten
patent: 2003/0194862 (2003-10-01), Mardian
patent: 2003/0203626 (2003-10-01), Derderian et al.
patent: 2003/0207032 (2003-11-01), Ahn et al.
patent: 2003/0207540 (2003-11-01), Ahn et al.
patent: 2003/0207593 (2003-11-01), Derderian
patent: 2003/0222300 (2003-12-01), Basceri et al.
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2003/0228747 (2003-12-01), Ahn et al.
patent: 2003/0232511 (2003-12-01), Metzner et al.
patent: 2003/0235961 (2003-12-01), Metzner et al.
patent: 2004/0004244 (2004-01-01), Ahn et al.
patent: 2004/0004247 (2004-01-01), Forbes et al.
patent: 2004/0004859 (2004-01-01), Forbes et al.
patent: 2004/0007171 (2004-01-01), Ritala et al.
patent: 2004/0009679 (2004-01-01), Yeo et al.
patent: 2004/0023461 (2004-02-01), Ahn et al.
patent: 2004/0033661 (2004-02-01),

Affiliated with

Also associated with

Rating

Lanthanide oxide / hafnium oxide dielectric layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lanthanide oxide / hafnium oxide dielectric layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lanthanide oxide / hafnium oxide dielectric layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3763056