Lanthanide doped TiOx dielectric films by plasma oxidation

Details Lanthanide doped TiOx dielectric films by plasma oxidation Lanthanide doped TiOx dielectric films by plasma oxidation

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

06884739

ABSTRACT:
A dielectric film containing lanthanide doped TiOxand a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by ion assisted electron beam evaporation of Ti, electron beam evaporation of a lanthanide selected from a group consisting of Nd, Tb, and Dy, and oxidation of the evaporated Ti/lanthanide film in a Kr/oxygen plasma. The growth rate is controlled to provide a dielectric film having a lanthanide content ranging from about five to about forty percent of the dielectric film. These dielectric films containing lanthanide doped TiOxare amorphous and thermodynamically stable such that the lanthanide doped TiOxwill have minimal reactions with a silicon substrate or other structures during processing.

REFERENCES:
patent: 3381114 (1968-04-01), Nakanuma
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4215156 (1980-07-01), Dalal et al.
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4399424 (1983-08-01), Rigby
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4590042 (1986-05-01), Drage
patent: 4647947 (1987-03-01), Takeoka et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4920071 (1990-04-01), Thomas
patent: 4993358 (1991-02-01), Mahawili
patent: 5006192 (1991-04-01), Deguchi
patent: 5055319 (1991-10-01), Bunshah et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5698022 (1997-12-01), Glassman et al.
patent: 5735960 (1998-04-01), Sandhu et al.
patent: 5795808 (1998-08-01), Park
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5822256 (1998-10-01), Bauer et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5840897 (1998-11-01), Kirlin et al.
patent: 5950925 (1999-09-01), Fukunaga et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6057271 (2000-05-01), Kenjiro et al.
patent: 6059885 (2000-05-01), Ohashi et al.
patent: 6093944 (2000-07-01), VanDover
patent: 6161500 (2000-12-01), Kopacz et al.
patent: 6171900 (2001-01-01), Sun
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206972 (2001-03-01), Dunham
patent: 6211035 (2001-04-01), Moise et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6225237 (2001-05-01), Vaartstra
patent: 6281144 (2001-08-01), Cleary et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6303481 (2001-10-01), Park
patent: 6368941 (2002-04-01), Chen et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6387712 (2002-05-01), Yano et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6432779 (2002-08-01), Hobbs et al.
patent: 6444039 (2002-09-01), Nguyen
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6458701 (2002-10-01), Chae et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6518610 (2003-02-01), Yang et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6527866 (2003-03-01), Matijasevic et al.
patent: 6531354 (2003-03-01), Maria et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6544875 (2003-04-01), Wilk
patent: 6573199 (2003-06-01), Sandhu et al.
patent: 6602338 (2003-08-01), Chen et al.
patent: 6613702 (2003-09-01), Sandhu et al.
patent: 6639267 (2003-10-01), Eldridge
patent: 6730575 (2004-05-01), Eldridge
patent: 20010002280 (2001-05-01), Sneh
patent: 20020089023 (2002-07-01), Yu et al.
patent: 20020155688 (2002-10-01), Ahn et al.
patent: 20020155689 (2002-10-01), Ahn et al.
patent: 20020192974 (2002-12-01), Ahn et al.
patent: 20030017717 (2003-01-01), Ahn et al.
patent: 20030228747 (2003-12-01), Ahn et al.
patent: 20040004244 (2004-01-01), Ahn et al.
patent: 20040033701 (2004-02-01), Ahn et al.
patent: 1096042 (2001-05-01), None
patent: 1124262 (2001-08-01), None
patent: 62-199019 (1987-09-01), None
patent: 5090169 (1993-04-01), None
patent: 2001-332546 (2001-11-01), None
Wolf et al (Silicon Processing of the VLSI Era, vol. 1, pp. 374-380).*
Aarik, Japan, et al., “Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures”,Applied Surface Science, 173, (2001), pp. 15-21.
Aarik, Jaan, et al., “Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition”,Journal of Crystal Growth, (2000), pp. 105-113.
Bright, A. A., et al., “Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/Sio2interfaces”,Applied Physics Letters, (Feb., 1991), pp. 619-621.
Cheng, Baohong, et al., “The impact of High-K Gate Dielectrics and Metal Gate Electrodes on Sub-100nm MOSFET's”,IEEE Transactions on Electron Devices, (Jul., 1999), pp. 1537-1544.
Copel, M., et al., “Structure and stability of ultrathin zirconium oxide layers on Si(001)”,Applied Physics Letters, vol. 76, No. 4, (Jan. 24, 2000), pp. 436-438.
Desu, S.B., “Minimization of Fatigue in Ferroelectric Films”,Phys. Stat. Sol.(a) 151, (1995), pp. 467-480.
Engelhardt, M., “Modern Applications of Plasma Etching and Patterning in Silicon Process Technology”,Contrib. Plasma. Phys., 39(5), (1999), pp. 473-478.
Forsgren, Katarina, et al., “Atomic Layer Deposition of HfO2using hafnium iodide”,Conference held in Monterey, California, (May, 2001), 1 page.
Fuyuki, Takashi, et al., “Electronic Properties of the Interface between Si and TiO2Deposited at Very Low Temperatures”,Journal of Applied Physics, (1986), pp. 1288-1291.
Fuyuki, Takashi, et al., “Initial stage of ultra-thin SiO2formulation at low temperatures using activated oxygen”,Applied Surface Science, (1997), pp. 123-126.
Gartner, M., et al., “Spectroellipsometric characterization of lanthanide-doped TiO2films obtained via the sol-gel technique”,Thin Solid Films, (1993), pp. 561-565.
Geller, S., et al., “Crystallographic Studies of Perovskite-like Compounds. II. Rare Earth Aluminates”,Acta Cryst.vol. 9, (1956), pp. 1019-1025.
Giess, E. A., et al., “Lanthanide gallate perovskite-type substrates for epitaxial, high-Tcsuperconducting Ba2YCu3O7-δfilms”,IBM J. Res. Develop. vol. 34, No. 6, (Nov. 6, 1990), pp. 916-926.
Hirayama, Masaki, et al., “Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen Radical Generated in High Density Krypton Plasma”,IEDM Technical Digest, (1999), pp. 249-252.
Hubbard, K. J., et al., “Thermodynamic stability of binary oxides in contact with silicon”,J. Mater. Res., (Nov., 1996), pp. 2757-2776.
Hunt, C. E., et al., “Direct bonding of micromachined silicon wafers for laser diode heat exchanger applications”,J. Micromech. Microeng., 1, (1991), pp. 152-156.
Iddles, D. M., et al., “Relationships between dopants, microstructure and the microwave dielectric properties of ZrO2-TiO2-SnO2ceramics”,Journal of Materials Science, vol. 27, (1992), pp. 6303-6310.
Jeon, Sanghun, et al., “Excellent Electrical Characteristics of Lanthanide (Pr, Nd, Sm, Gd, and Dy) Oxide and Lanthanide-doped Oxide for MOS Gate Dielectric Applications”,Technical Digest of IEDM, (2001), pp. 471-474.
Jeong, Chang-Wook, et al., “Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films”,Japanese Journal of Applied Physics, (Jan., 2001), pp. 285-289.
Kawai, Y., et al., “Ultra-low-temperature growth of high-integrity gate oxide films by low-energy Ion-assisted oxidation”,Applied Physics Letters, 64(17), (Apr., 1994), pp. 2223-2225.
Keomany, D., et al., “Sol gel preparation of mixed cerium-titanium oxide thin films”,Solar Energy Materials and Solar Cells, (1994), pp. 429-441.
Kim, C. T., et al., “Application of Al2O3Grown by Atomic Layer Deposition to DRAM and FeRAM”,International Symposium in Integrated Ferroelectrics

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