Photoresists and processes for microlithography

Details Photoresists and processes for microlithography Photoresists and processes for microlithography

2005-04-26

2005-04-26

Thornton, Yvette C. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S286100, C430S287100, C430S907000, C430S910000

Reexamination Certificate

active

06884562

ABSTRACT:
Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched copolymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.

REFERENCES:
patent: 4613657 (1986-09-01), Narita et al.
patent: 4665144 (1987-05-01), Ohmori et al.
patent: 5061602 (1991-10-01), Koch et al.
patent: 5071731 (1991-12-01), Chen et al.
patent: 5077174 (1991-12-01), Bauer et al.
patent: 5120629 (1992-06-01), Bauer et al.
patent: 5120633 (1992-06-01), Bauer et al.
patent: 5145764 (1992-09-01), Bauer et al.
patent: 5252427 (1993-10-01), Bauer et al.
patent: 5262281 (1993-11-01), Bauer et al.
patent: 5492793 (1996-02-01), Breyta et al.
patent: 5585222 (1996-12-01), Kaimoto et al.
patent: 5861231 (1999-01-01), Barclay et al.
patent: 5891603 (1999-04-01), Kodama et al.
patent: 5928840 (1999-07-01), Matsuo et al.
patent: 5942367 (1999-08-01), Watanabe et al.
patent: 6033828 (2000-03-01), Shimada et al.
patent: 6117962 (2000-09-01), Weng et al.
patent: 6136498 (2000-10-01), Jagannathan et al.
patent: 6156481 (2000-12-01), Takeda et al.
patent: 6165678 (2000-12-01), Allen et al.
patent: 6210856 (2001-04-01), Lin et al.
patent: 20010010890 (2001-08-01), Hatakeyama et al.
patent: 20010018162 (2001-08-01), Hatakeyama et al.
patent: 20010051670 (2001-12-01), Goupil et al.
patent: 0473547 (1991-08-01), None
patent: 0773478 (1997-05-01), None
patent: 0789278 (1997-08-01), None
patent: 1996101506 (1994-09-01), None
patent: 1998031310 (1996-07-01), None
patent: 1998111569 (1996-12-01), None
patent: WO 9115810 (1991-10-01), None
patent: WO 9215628 (1992-09-01), None
Hertler et al., Synthesis and Applications of Acid-Labile Acrylic Polymers, International Symposium on New Polymers, 1991, 137-149.
Gabor et al., Poly(tert-butyl methacrylate)-Based Block and Random Copolymer Resists Designed for 193 nm Wavelength Exposure Tools, Chem. Mater. 1996, vol. 8, pp. 2282-2290.
Gabor et al., Silicon-Containing Block Copolymer Resist Materials, Microelectronics Technology, Chapter 19, pp. 281-298.
Ober et al., Block Copolymers as Lithographic Materials, Journal of Photopolymer Science and Technology, vol. 9, No. 1, 1996, pp. 1-12.
Patent Abstracts of Japan, Publication No. 09-189998, Date of Publication: Jul. 22, 1997, Applicant: Matsushita Electric Ind Co. LTD.
Patent Abstracts of Japan, Publication No. 09-101506, Date of Publication: Apr. 16, 1996, Applicant: Japan Synthetic Rubber Co. LTD.
Patent Abstracts of Japan, Publication No. 10-069071, Date of Publication: Mar. 10, 1998, Applicant: Internatl Business Mach Corp <IBM>.
Patent Abstracts of Japan, Publication No. 10-031310, Date of Publication: Feb. 03, 1998, Applicant: Japan Synthetic Rubber Co. LTD.
Patent Abstracts of Japan, Publication No. 10-111569, Date of Publication: Apr. 28, 1998, Applicant: Japan Synthetic Rubber Co. LTD.
Patent Abstracts of Japan, Publication No. 04-230645, Date of Publication: Aug. 19, 1992, Applicant: Ciba Geigy Ag.
Yamana M, Itani T, Yoshino H, Hashimoto S, Tanabe H, and Kasama K, “Deblocking Reaction of Chemically Amplified ArF Positive Resists” Proc. Spie—Int. Soc. Opt. Eng., vol. 3333, No. 1, Jun. 1988 pp. 32-42 (XP002130419).
Database WPI, Section Ch, Week 199815, Derwent Publications LTD, London, GB: (XP002130420).
Introduction to Microlithography, Second Edition, American Chemical Society, Chapter 3, pp. 139-267, “Organic Resist Materials” (1994).
Journal of Photopolymer Science and Technology, vol. 10, No. 3 (1997) 511-520.
Macromolecules, 30, pp. 6517-6524, (1997) “Synthesis of Cycloolefin-Maleic Anhydride Alternating Copolymers for 193 nm Imaging”.
SPIE, vol. 2724, pp. 355-364, T. Wallow, F. Houlihan, O Nalamasu, E. Chandross, T. Neenan, and E. Reichmanis.

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