Isotopically-enriched boron-containing compounds, and...

Details Isotopically-enriched boron-containing compounds, and... Isotopically-enriched boron-containing compounds, and...

2011-03-15

2011-11-22

Estrada, Michelle (Department: 2829)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S525000, C438S535000

Reexamination Certificate

active

08062965

ABSTRACT:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

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