Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-08-13
2000-02-22
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438396, 438639, H01L 2170
Patent
active
060279664
ABSTRACT:
A capacitor structure is provided, with a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein, a non-conductive sidewall spacer formed in the first opening, the non-conductive sidewall spacer having a second opening formed therein, and a second conductor formed in the second opening.
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Comfort James H.
Grill Alfred
Kotecki David Edward
Saenger Katherine Lynn
Dougherty Anne V.
Guerrero Maria
International Business Machines - Corporation
Jr. Carl Whitehead
Mortinger Alison D.
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