Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-02-07
2006-02-07
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S283000, C438S299000, C438S308000, C438S535000
Reexamination Certificate
active
06995051
ABSTRACT:
Etching methods and apparatus are disclosed for irradiation assisted reactive ion etching. One embodiment includes providing a substrate having a patterned mask thereon with an exposed area; forming an etch area in the substrate by implanting the exposed area of the substrate with a reactive species; and (laser) irradiating the etch area to volatilize the etch area. The methods modify etch conditions such that they approximate an ‘atomic layer etching’ process, in which thin layers of substrate are selectively and successively etched.
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Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Hoffman Warnick & D'Alessandro LLC
International Business Machines - Corporation
Jaklitsch Lisa U.
Mulpuri Savitri
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