Irradiation assisted reactive ion etching

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S283000, C438S299000, C438S308000, C438S535000

Reexamination Certificate

active

06995051

ABSTRACT:
Etching methods and apparatus are disclosed for irradiation assisted reactive ion etching. One embodiment includes providing a substrate having a patterned mask thereon with an exposed area; forming an etch area in the substrate by implanting the exposed area of the substrate with a reactive species; and (laser) irradiating the etch area to volatilize the etch area. The methods modify etch conditions such that they approximate an ‘atomic layer etching’ process, in which thin layers of substrate are selectively and successively etched.

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