Ionized PVD with sequential deposition and etching

Details Ionized PVD with sequential deposition and etching Ionized PVD with sequential deposition and etching

2004-03-05

2010-06-29

Neckel, Alexa D (Department: 1795)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S192100, C204S192130, C204S192330, C204S298010, C204S298030, C204S298170, C204S298200, C204S298220, C204S298320, C204S298370

Reexamination Certificate

active

07744735

ABSTRACT:
An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters. Pressure of more than 50 mTorr are preferred for deposition in a thermalized plasma while pressure of less than a few mTorr is preferred for etching.

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