Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-09-26
2010-10-19
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51051, C313S504000, C428S690000, C546S016000
Reexamination Certificate
active
07816668
ABSTRACT:
It is an object of the present invention to provide a material having a high Tg and a wide energy gap. The present invention provides a spirofluorene derivative represented by General Formula 1. (In the formula, R1is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or a group represented by General Formula 2. Each of R2and R3is either hydrogen or an alkyl group having 1 to 4 carbon atoms and may be identical or different. R4is an aryl group having 6 to 15 carbon atoms. Each of R5and R6is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 15 carbon atoms and may be identical or different.)
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Kawakami Sachiko
Nakashima Harue
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co. Ltd
Such Matthew W
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