Ion source cleaning end point detection

Details Ion source cleaning end point detection Ion source cleaning end point detection

2011-08-23

2011-08-23

Berman, Jack (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C134S001100, C134S022100

Reexamination Certificate

active

08003959

ABSTRACT:
In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.

REFERENCES:
patent: 6135128 (2000-10-01), Graf et al.
patent: 7819981 (2010-10-01), DiMeo et al.
patent: 2007/0045570 (2007-03-01), Chaney et al.
patent: 2007/0108395 (2007-05-01), Horsky et al.
patent: 2010/0154835 (2010-06-01), Dimeo et al.

Affiliated with

Also associated with

Rating

Ion source cleaning end point detection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion source cleaning end point detection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion source cleaning end point detection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2662614