Electronic digital logic circuitry – Significant integrated structure – layout – or layout... – Field-effect transistor
Reexamination Certificate
2011-07-12
2011-07-12
Le, Don P (Department: 2819)
Electronic digital logic circuitry
Significant integrated structure, layout, or layout...
Field-effect transistor
C326S112000
Reexamination Certificate
active
07977978
ABSTRACT:
Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.
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Kim Chang-Jung
Kim Sang-wook
Kim Sun-Il
Song I-Hun
Yin Huaxiang
Harness & Dickey & Pierce P.L.C.
Le Don P
Samsung Electronics Co,. Ltd.
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