Internal balanced coil for inductively coupled high density...

Semiconductor device manufacturing: process – Including control responsive to sensed condition

Reexamination Certificate

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C438S788000, C257SE21528, C257SE21478, C427S009000, C427S255230

Reexamination Certificate

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07572647

ABSTRACT:
A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

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IN: Siqing Lu et al.; U.S. Appl. No. 11/202,043; filed Feb. 15, 2007; Title: Two-Piece Dome with Separate RF Coils for Inductively Coupled Plasma Reactors; to be published Feb. 2007.
U.S. Appl. No. 11/670,662, filed Feb. 2, 2007, First Named Inventor: Robert Chen.
U.S. Appl. No. 11/670,701, filed Feb. 2, 2007, First Named Inventor: Robert Chen.

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