Interconnect structures with encasing cap and methods of...

Details Interconnect structures with encasing cap and methods of... Interconnect structures with encasing cap and methods of...

2006-08-14

2009-02-10

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000, C438S687000, C257SE21170, C257SE21006, C257SE21278, C257SE21293, C257SE21311

Reexamination Certificate

active

07488677

ABSTRACT:
A method of making an interconnect that includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric; and depositing an encasing cap over the extended portion of the interconnect structure.

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