Interconnect structure with dielectric air gaps

Details Interconnect structure with dielectric air gaps Interconnect structure with dielectric air gaps

2006-07-11

2008-07-08

Nguyen, Ha (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S551000, C438S552000, C438S319000, C438S411000, C438S421000, C430S281100, C430S282100, C430S283100, C430S284100, C430S288100

Reexamination Certificate

active

07396757

ABSTRACT:
An interconnect structure with improved performance and capacitance by providing air gaps inside the dielectric layer by use of a multi-phase photoresist material. The interconnect features are embedded in a dielectric layer having a columnar air gap structure in a portion of the dielectric layer surrounding the interconnect features. The interconnect features may also be embedded in a dielectric layer having two or more phases with a different dielectric constant created. The interconnect structure is compatible with current back end of line processing.

REFERENCES:
patent: 5949143 (1999-09-01), Bang
patent: 6104077 (2000-08-01), Gardner et al.
patent: 6329279 (2001-12-01), Lee
patent: 6440839 (2002-08-01), Partovi et al.
patent: 6635967 (2003-10-01), Chang et al.
patent: 6780753 (2004-08-01), Latchford et al.
patent: 6861332 (2005-03-01), Park et al.
patent: 2005/0062165 (2005-03-01), Saenger et al.
patent: 2006/0019482 (2006-01-01), Su et al.

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