Interconnect structure with bi-layer metal cap

Details Interconnect structure with bi-layer metal cap Interconnect structure with bi-layer metal cap

2007-02-16

2010-06-29

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S622000, C438S653000, C257SE21459, C257SE23141

Reexamination Certificate

active

07745282

ABSTRACT:
A structure and method of fabricating an interconnect structures with bi-layer metal cap is provided. In one embodiment, the method includes forming an interconnect feature in a dielectric material layer; and forming a bi-layer metallic cap on a top surface of the interconnect feature. The method further includes depositing a blanket layer of a dielectric capping layer, wherein the depositing covers an exposed surface of the dielectric material layer and a surface of the bi-layer metallic cap. The bi-layer metallic cap includes a metal capping layer formed on a conductive surface of the interconnect feature; and a metal nitride formed on a top portion of the metal capping layer. An interconnect structure is also described having an interconnect feature formed in a dielectric layer; a bi-layer metallic cap formed on a top portion of the interconnect feature; and a dielectric capping layer formed over the bi-layer metallic cap.

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