Interconnect, interconnect forming method, thin film...

Details Interconnect, interconnect forming method, thin film... Interconnect, interconnect forming method, thin film...

2005-05-10

2005-05-10

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S678000

Reexamination Certificate

active

06890849

ABSTRACT:
An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.

REFERENCES:
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6740591 (2004-05-01), Miller et al.
patent: 11-135504 (1999-05-01), None
patent: 11-238703 (1999-08-01), None
patent: 2001-189295 (2001-07-01), None

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